Hamid Fardi, PhD

Professor of Electrical Engineering

Hamid Fardi received his PhD degree in Electrical Engineering from the University of Colorado at Boulder in 1986. He has been with the Department of Electrical Engineering of the University of Colorado Denver since 1992 where he is now a full professor. Before joining CU Denver, Fardi was a postdoctoral fellow at Rensselaer Polytechnic Institute. From 1988 to 1992 he was with NSF Center for Millimeter-Microwave Computer Aided Design of the University of Colorado. Dr. Fardi was a visiting research scientist at National Renewable Energy Lab (NREL) in 1996 and 1997. He is a frequent research visitor of National Institute of Standard and Technology (NIST). Dr. Fardi is the coordinator of NIST PREP (Professional Research Experience Program) at CU Denver. Dr. Fardi's research interests concern the physics and simulation of novel semiconductor devices. He teaches undergraduate and graduate courses in electronics at both Denver and the Boulder Campuses of the University of Colorado.

NIST PREP CANDIDATES

Dr. Fardi has received a $2.7M award from the U.S. Department of Commerce as part of the NIST PREP program. PREP places undergraduate and graduate students as well as pos-doc researchers in NIST labs to gain hands-on experience.

Please apply directly to the NIST PREP Program if you are interested in the NIST PREP research experience program.

PHD STUDENTS

Please apply directly to the EASPhD PhD PROGRAM

If you are interested in pursuing a doctorate degree in one of the following areas of my research.

SOFTWARE PROGRAMS

Simwindows
Afors-het
PC1D
Silvaco International

Research and education interests :

Solid State Devices
VCSEL's ond ptoelectronic devices for medical applications
Physics of Semiconductor Devices and Materials
Solar cells and Photovoltiacs
SiC Bipolar Junction Transistors
GaAs Quantum Well Solar Cells
CdTe Thin Film Solar Cells
Analog and Digital Electronics/Circuit Design
IC Design and Modeling
2D Simulations

Research in this area focuses on solid state devices and physics of semiconductor materials. This includes semiconductor device modeling and simulation, device fabrication, measurement and characterization, VLSI multilayered and thin film materials.

The device structures I have worked with are transistors, radio-frequency and microwave and millimeter wave devices, optoelectronics, photodiodes, photovoltaics, and solar cells.

Some of the related materials beside Silicon are Silicon Carbide, Gallium Aluminum Arsenide, Indium Phosphide ( and other related group of III-V), and Mercury Cadmium Telluride (group II-VI) and has recently extended my research to a series of magnetic materials and devices. The study of these devices and materials are important in the development of advanced electronics and computing systems, and are used in data storage memory systems, microprocessors, biomedical equipment and systems, radars, hand-held electronic devices, advanced sensors, microfluid, and numerous other nano/microelectronic devices.

In the last few years I expanded my work to modeling and fabrication of nano-scale magnetic sensors (at NIST-Boulder). These sensors are used for magnetic targeting of therapeutic agents, such as drugs or genes, to a specific spot on the body, ferrofluids, magnetic recording and permanent magnets.

Sean Halloran MSEE University of Colorado Denver. Sean is now with PrimeStar Solar Inc., standing in front of a deposition chamber at NIST Laboratory.

Ankur Mali, MSEE working on his thesis project on SEM microscope studying the formation of defects at silicon-silicon oxide interface. The SEM is donated by Tandberg Data Inc in 2007and is housed in UCD North Classroom Building.

Graduate students in cleanroom during a class session. The course was offered at CAPT lab in 2007 as a graduate level laboratory course in fabrication and processing of semiconductor devices. The course received enormous interest by students.

H. Fardi and F. Buny*, Characterization and Modeling of CdS/CdTe Heterojunction Thin‐Film Solar Cell for High Efficiency Performance, International Journal of Photoenergy Volume 2013 Article ID 576952, 6 pages, http://dx.doi.org/10.1155/2013/576952, 2013.

H. Fardi, Modeling Hot Carriers Quantum Well Solar Cells, Journal of Physics and Application, Vol. 1, No. 1, pp. 1‐9, ISSN: 2335‐6901, 2013.

Fardi, H., “Design and Simulation of Multi Quantum‐Well AlGaAs/GaAs Single Junction Solar Cell with Back Surface Reflector,” Journal of Renewable Energy, Article ID 859519, 5 pages, doi: 10.5402/2012/859519, 2012.

H. Fardi, M. Jan*, and Bart Van Zeghbroeck, Design and Simulation of Multi‐Quantum‐Well GaAsl AIGaAs Single Junction p‐i‐n with Back Surface DBR Reflector, 38th IEEE Photovoltaic Specialists Conference (PVSC) pp. 785 – 788, 2012.

X. Niu* and H. Fardi, “Effects of base doping and carrier lifetime on differential current gain and temperature coefficient of 4H‐SiC power bipolar junction transistors” Journal of Electronics, 99(4), pp. 531‐542, January 2012.

Fardi, H., Simulation of hot electron quantum well photovoltaic devices,” SPIE Physics and Simulation of Optoelectronics Device , vol. 7933, pp.793325‐1 793325‐8, 2011.

Fardi, H., “Simulation of Hot Electron Quantum Well Photovoltaic Devices”, SPIE Physics and Simulation of Optoelectronics Devices, vol.7598, 2011.

X. Niu* and H. Fardi, “Effects of base doping and carrier lifetime on differential current gain and temperature coefficient of 4H‐SiC power bipolar junction transistors” Journal of Electronics, DOI:10.1080/ 00207217.2011.629226, pp. 1‐12, Dec. 15 2011.

Fardi, H., “Numerical Modeling of Hot Electron GaAs/AlxGa1‐xAs Quantum Well Photovoltaic” 35th IEEE Photovoltaic Specialists Conference (PVSC), ISBN: 978‐1‐4244‐5892‐9, pp. 1800‐1803, 2010.

Fardi, H., Alaghband, G., “Analog behavioral modeling of magnetoresistive sensors”, 53rd IEEE 2010International Midwest Symposium on Circuits and Systems (MWSCAS), ISBN: 9781424477715 (vol. 2), pp.408‐411, 2010.

F.C. S. Da Silva B.P. Gorman, M. J. Kaufman, , H. Fardi, D.S. Wisbey, J.S. Kline, D. Braje, and D.P. Pappas, “ Epitaxial Growth of (111) Al/Al2O3 Trilayers on Sapphire,” American Physical Society, vol. 55, no. 2, March 15‐19, 2010.

Fardi, H. and B. Van Zeghbroeck, “Modeling and Simulation of AlGaAs/GaAs QW‐DBR Junction Photovoltaic Devices,” of SPIE: Physics and Simulation of Optoelectronics Devices, vol. 7597, pp. 759723 pp. 1‐ 9, 2010.

L. Yuan, S.T. Halloran*, D. Wisbey, D. Pappas, F. da Silva, and Fardi, H., " Scissoring in Narrow Submicron Permalloy Stripes Induced by Oersted Field,” Journal of Applied Physics, 106, 113919, December 10 2009.

Fardi, H., “Modeling and characterization of 4H‐SiC bipolar transistors, Transaction on Electronics and Signal, vol. 1, pp. 1‐7, December 2008.

Fardi, H., “modeling the dc gain performance of 4H‐SiC BJTs”, Journal of Computation and mathematics in Electrical and Electronic Engineering, vol. 26, no.6, pp. 1236‐1246, 2007.

S.T. Halloran*, H. Fardi, F.C.S. Da Silva, D. Pappas, “Permanent‐Magnet‐Free Stabilization and Sensitivity Tailoring of Magnetoresistive Field Sensors,” Journal of Applied Physics, vol. 102, 033904, pp. 1‐3, 2007.

S.T. Halloran*, H. Fardi, F.C.S. da Silva, D. Pappas, E. Hill, “Modulated Antiferromagnetic Bias with Tunable Sensitivity”, Materials Research Society (MRS) International Conference, San Francisco, CA, April 9‐13, 2007.

L. Yuan, F. C. S. da Silva, S. T. Halloran*, H. Fardi, and D. Pappas, “Oersted Field Induced Magnetization Scissoring I Single Layer Permalloy Bar,” 52nd Institute of Electrical and Electronic Engineers (IEEE) International Magnetics Conference (INTERMAG), November 5‐9, Tampa, Florida, 2007.

Alaghband, G., Gnabasik*, D., Fardi, H., “Scientific Assistant Virtual Laboratory (SAVL),” MA07, American Physical Society, March 5‐9, Denver, Colorado, 2007.

Fardi, H., Alaghband, G., “Modeling Hot Electron in single Quantum Well P‐i‐N Photodiodes, IEEE/LEOS Summer Topical Meetings, pp. 44‐45, Quebec City, Canada, July 17 – 19, 2006.

S.T. Halloran*, H. Fardi, F.C.S. Da Silva, D. Pappas, E. Hill, “Low Noise, High Sensitivity Anisotropic Magnetoresistive Sensors with. Second Harmonic Readout” American Vacuum Society, 53rd International Symposium, San Francisco, CA , November 2006.

H. Fardi, “Modeling the DC gain of 4H‐SiC bipolar transistors as a function of surface recombination velocity,” Solid State Electronics, vol. 49, no. 4, pp. 663‐666, April 2005.

H. Fardi, “Detailed formulation of energy balance equations in single quantum well devices,” Journal of Computation and mathematics in Electrical and Electronic Engineering, vol. 21, no.3, pp. 425‐437, 2002.

H. Fardi and G. Alaghband, “Simulation of hot electron effect in negative‐electron‐affinity GaN pn junction diodes,” SPIE Physics and Simulation of Optoelectronics Devices, vol. 4646, pp. 574‐582, San Jose, CA, January 2002.

H. Fardi, “Modeling of pnpn GaN and 6H‐SiC Thyristors,” SPIE Physics and Simulation of Optoelectronics Devices, vol. 3944, pp. 110‐118, San Jose, CA, January 2000.

H. Fardi, D. W. Winston, R. E. Hayes, and M. C. Hanna, “ Numerical modeling of energy balance equations in Quantum Well AlGaAs/GaAs p‐i‐n Photodiodes,” IEEE Transactions on Electron Devices, vol. 47, no. 5, pp. 915‐921, May 2000.

H. Fardi, D. W. Winston*, R. E. Hayes, and M. C. Hanna, “Numerical simulation of energy balance equations in AlGaAs/GaAs pin diodes with single quantum wells,” SPIE Physics and Simulation of Optoelectronics Devices, vol. 3625, pp. 543‐551, San Jose, CA, January 1999.

H. Fardi, “Device Modeling and Analysis of GaN/SiC Heterojunction Bipolar Transistors,” Proceedings of Sixth International Conference on Simulation of Devices and Technologies, pp. 163‐168, Cape Town, South Africa, pp. 163‐168, October 1998.

H. Fardi, G. Alaghband, and J. I. Pankove,“ Numerical modeling and characterization of high frequency high power high temperature GaN/SiC Heterostructure bipolar transistors,” Journal of Electronics, vol. 82, no. 6, pp. 567‐574, 1997.

H. Fardi and E. Sahm*,“ Transfer Function Modeling of a Graphical Circuit,” Proceedings of the 12th IEEE University Government Industry Microelectronics Symposium, Rochester, New York, July 20‐23, 1997.

H. Fardi and J.I. Pankove," Modeling and characterization of high‐temperature GaN/SiC HBT's," SPIE Physics and Simulation of Optoelectronics Devices,vol. 2693, pp. 73‐83, , January 1996.

H. Fardi, “Device Modeling and Characterization of GaN/SiC HBT for High Temperature Operation," Proceedings of the 188th Electrochemical Society Meeting, vol. 95‐2, pp. 903‐904, Chicago, IL, 1995.

H. Fardi, "Device Modeling and Characterization of GaN/SiC HBT for High Temperature Operation," Proceedings of the conference on Wide BandGap Semiconductors and Devices, vol. 95‐21, pp. 198‐203, 1995.

H. Fardi, "Effects of Electron Trappings on Diffusion Time‐of‐Flight Measurement in GaAs," Journal of Solid State Electronics , vol. 38. no. 10, pp. 1811‐1816, 1995.

H. Fardi, "Effects of Interface and Bulk Recombination on Switching Characteristics of AlGaAs/GaAs pnpn Bistable Device," IEEE Transactions on Electron Devices, vol. ED‐42, no. 12, pp. 2248‐2250, December 1995.

H. Fardi, "Numerical Investigation of Carrier Transport in Double Heterostructure AlGaAs / GaAs pnpn Bistable Device, " Journal of Computation and Mathematics in Electrical and Electronic Engineering, vol. 13, no. 4, pp. 893‐902, 1994.

K.L. Miller*, H. Fardi, and R.E. Hayes, " Effect of Multiple Reflection Propagation on Photon Recycling in GaAs/AlGaAs Double Heterostructures, " Journal of Applied Physics, vol. 75, no. 12, pp. 8158‐8162, June 1994.

H. Fardi (invited paper), "Modeling of Double Heterostructure AlGaAs/GaAs pnpn Bistable Switch, “Proceedings of the Numerical Analysis of Semiconductor Devices and Integrated Circuits‐ NASECODE X, pp. 93‐94, Dublin, Ireland, June 1994.

H. Fardi, “Transient modeling of pnpn AlGaAs/GaAs optoelectronic switches," SPIE Physics and Simulation of Optoelectronics Devices,vol. 2146 pp.100‐111, 1994.

H. Fardi, "Transient Modeling of Heterostructure Optoelectronic Switches," Proceedings of the IEEE University Government Industry Microelectronics, pp. 156‐161, Durham, NC, 1993.

H. Fardi, "Analysis of Submicron GaAs MESFETs using Drift‐Diffusion Simulators," Proceedings of the Numerical Analysis of Semiconductor Devices and Integrated Circuits‐ NASECODE IX, pp. 34‐35, Copper Mountain, Colorado, 1993.

H. Fardi, “Computer Modeling of pnpn optoelectronic Switch,” ES148‐E International Conference on Electrical Engineering, 1993.

H. Fardi, "Characterization of submicrometer GaAs MESFET using drift‐diffusion simulator," Journal of Computation and Mathematics in Electrical and Electronic, vol.12, no. 4, pp. 361‐375, 1993.

H. Fardi, "Simulation and Modeling of PNPN Optical Devices,” IEEE Transaction on CAD of Integrated Circuits and Systems, vol. 12, no. 5, pp. 666‐671, 1993.

H. Fardi and R. E. Hayes, "Modeling Submicrometer GaAs MESFETs Using PISCES with an Apparent Gate‐ Length Dependent Velocity‐Field Relation," IEEE Transactions on Electron Devices, vol. ED‐39, pp. 1778‐ 1780, no. 7, 1992.

H. Fardi, D. Suda*, and R. E. Hayes, "Numerical Modeling of PNPN Optical Switches," Proceedings of Indium Phosphide and Related Materials, pp. 300‐304, 1990.

I. B. Bhat, H. Fardi, S. K. Ghandhi, and C. J. Johnson, " Highly Uniform, Large Area HgCdTe Layers on CdTe and CdTeSe Substrates,” Journal Vacuum Science and Technology, A6 (4), pp. 2800‐2804, 1988.

Ghandhi, S. K., Bhat, I. B., and Fardi, H." Organometallic Epitaxy of HgCdTe CdTeSe Substrates, with High Compositional Uniformity,” Applied Physics Letters, vol. 52, No. 5, pp. 392‐394, 1988.

I. B. Bhat, H. Fardi, S. K. Ghandhi, and C. J. Johnson, " Highly Uniform, Large Area HgCdTe Layers on CdTeSe Substrates,” Proceedings of the Physics and Chemistry of Mercury Cadmium Telluride, New Orleans, Louisiana, 1987.

R. K. Ahrenkiel, D. J. Dunlavy, H. C. Hamaker, R. T. Green, C. R. Lewis, R. E. Hayes, and H. Fardi, "Time of Flight Studies of Minority Carrier Diffusion in AlxGa1‐xAs Homojunction", Applied Physics Letters, vol. 49, no. 12, pp.725‐727, 1986.

R. E. Hayes and H. Fardi, "The Use of Admittance Spectroscopy to Determine Deep‐Level Characteristics in Semiconductor Heterojunctions ", Proceedings of Advanced Materials Institute, pp.233‐235, Golden, Colorado, 1987.

R. K. Ahrenkiel, H. Ahroni, R. E. Hayes, and H. Fardi, " Transient Current Studies of Junction Activity in Solar Cells, "Proceedings of the 18th IEEE Photovoltaic Specialist Conference(PVSC), pp.738‐743, 1985.

R. E. Hayes and H. Fardi, "Simulation of Measurements of Semiconductor Materials Symposium on Current Materials Research , Denver, April 1985.

S. Geller, A. K. Ray, H. Fardi, and K. Nag, " New Solid Electrolyte: CsCu2Cl3I2,” Physical Review B, vol. 25, no. 4, pp. 2968‐2970, 1982.

College of Engineering, Design and Computing

CU Denver

North Classroom

1200 Larimer Street

Suite 3034

Denver, CO 80204

303-315-7170

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College of Engineering, Design and Computing

Hamid Fardi, PhD

Professor of Electrical Engineering

NIST PREP CANDIDATES

PHD STUDENTS

SOFTWARE PROGRAMS

Research and education interests :

College of Engineering, Design and Computing

Hamid Fardi, PhD

Professor of Electrical Engineering

NIST PREP CANDIDATES

PHD STUDENTS

SOFTWARE PROGRAMS

Research and education interests :

Research

Students

Publications

College of Engineering, Design and Computing